发明名称 MANUFACTURE OF SEMICONDUCTOR CERAMIC WITH POSITIVE CHARACTERISTICS
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method with a stable quality for a semiconductor ceramic with positive characteristics, in which the semiconductor ceramic has good electrical characteristics that are hardly affected by changes in manufacturing conditions. SOLUTION: In a manufacturing method for a semiconductor element with positive characteristics, a main BaTiO3 -based compound as a calcined material that includes no silicon is prepared. An additive compound, made up of Ba2 TiSi2 O8 and Ban Tim On+2n , (where 1<=n<=4, 2<=m<=13, and n<m) is prepared. After a main compound and the additive compound are put together and mixed, a main burning-in step is carried out.
申请公布号 JPH1187108(A) 申请公布日期 1999.03.30
申请号 JP19970257457 申请日期 1997.09.05
申请人 TDK CORP 发明人 TAKAHASHI CHIHIRO;SATO SHIGEKI
分类号 C04B35/46;H01C7/02;H01C17/065;H01C17/30 主分类号 C04B35/46
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