| 摘要 |
PROBLEM TO BE SOLVED: To obtain the resist composition capable of forming a micropattern in high precision and fidelity on a substrate by incorporating a specified phosphorus-containing in the positive resist composition composed essentially of an alkali-soluble resin and a naphthoquinonediazido compound. SOLUTION: This positive resist composition contains the alkalisoluble resin, the quinonediazido compound, and at least one of the phosphorus containing compounds represented by formulae I-III and the like. In the formulae I-III, each of X1 and X3 is an H atom or a 1-3C alkyl or alkoxy group; and X2 is a 1-3 C alkyl or alkoxy group or 6-9 C optionally substituted phenyl or 7-10 C benzyl group. This positive resist composition film is formed on the substrate and the substrate is etched by using a resist pattern formed by exposure and development as an etching mask. |
