| 摘要 |
The invention concerns a microelectronics structure comprising a low voltage part provided with protection against a high voltage part and a method for obtaining said protection. The structure comprises at least a low voltage element (2) and at least a high voltage element (4) formed on a semiconductor substrate (6). The invention is characterised in that it consists in forming at least one trench (18) passing through the low voltage element, forming a semiconductor zone with a doping opposite to that of the substrate, at least around the walls of the trench or trenches and producing a contact system (24) on said zone. The invention is applicable to smart power integrated circuits. |
