| 摘要 |
A magnetoresistive element, comprising a crystal structure with a grain boundary formed at a misorientation angle, and a method of producing a crystal structure having colossal magnetoresistance, wherein a grain boundary is formed at a misorientation angle. The crystal structure comprises a substrate layer (12) and a CMR film layer (10) epitaxially grown thereon, the CMR film layer (10) having a plurality of first sections and a plurality of second sections with intermediate grain boundaries, the crystallographic axis of said first sections being different from the crystallographic axis of said second sections. The method comprises the following steps: forming on a base crystal material a template comprising a first set of sections and a second set of sections with intermediate boundaries, the crystallographic axis of said first set being different from the crystallographic axis of said second set, and growing a film epitaxially on said base crystal material to form a plurality of grain boundaries over the boundaries between said first set and said second set. <IMAGE> |
