| 摘要 |
PROBLEM TO BE SOLVED: To enable junctions of a gate/source and a gate/drain to be enhanced in control in doping by a method, wherein a side wall spacer trough is demarcated by the use of a hybrid resist. SOLUTION: A wafer is prepared, and a hybrid resist layer is attached to the wafer, exposed to light through a mask, and developed (302 to 308) for the formation of a sidewall spacer. A hard mask is etched through a spacer (301), a uniform exposure process and a development process are carried out (312), a gate matter is etched through the residual hard mask (314), and a sidewall spacer trough is formed. Then, the exposed hard mask and a negative-type hybrid resist are removed (316 and 313), and a gate edge implant is formed (320). Then, a sidewall oxide and a nitride stopper are attached (322), an excess sidewall spacer matter and an excess gate matter are removed (326 and 328), and are injected (330) to a source and a drain region. |
