发明名称 |
Controlled shrinkage of photoresist |
摘要 |
<p>A process for controlled shrinkage of photolithographic features formed in photoresist. A shrinkage profile is determined for the photoresist and sizes of the photolithographic features. The photoresist is then exposed to ultraviolet radiation and elevated temperature until the photolithographic features shrink a desired amount. <IMAGE></p> |
申请公布号 |
EP0901044(A2) |
申请公布日期 |
1999.03.10 |
申请号 |
EP19980307160 |
申请日期 |
1998.09.04 |
申请人 |
AXCELIS TECHNOLOGIES, INC. |
发明人 |
EISELE, JEFFREY ALLAN;MOHONDRO, ROBERT DOUGLAS |
分类号 |
G03F7/038;G03F7/38;G03F7/40;H01L21/027;(IPC1-7):G03F7/20 |
主分类号 |
G03F7/038 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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