发明名称 Electrostatic discharge protection circuit having eprom
摘要 An electrostatic discharge protection circuit protects an internal circuit that is coupled to a pad from electrostatic discharge damage. The electrostatic discharge protection circuit comprises a PNP transistor, a NPN transistor, and an erasable programmable read only memory. The PNP and NPN transistors have an emitter, a base, and a collector, respectively. The PNP transistor is configured with its emitter connected to the pad, its base connected to the collector of the NPN transistor, and its collector connected to the base of the NPN transistor. The emitter of the NPN transistor is connected to a circuit node. The erasable programmable read only memory is configured with a drain connected to the base of the PNP transistor, a source connected to the circuit node, and a control gate coupled to the circuit node. When electrostatic discharge stress occurs at the pad, the erasable programmable read only memory enters breakdown to be programmed and triggers the conduction of the transistors.
申请公布号 US5869873(A) 申请公布日期 1999.02.09
申请号 US19980073154 申请日期 1998.05.05
申请人 WINBOND ELECTRONICS CORP. 发明人 YU, TA-LEE
分类号 H02H9/04;(IPC1-7):H01L23/62;H02H3/20;H02H9/00 主分类号 H02H9/04
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