| 摘要 |
PROBLEM TO BE SOLVED: To shorten the period for development by forming the lower electrode having a crown structure in consideration of the embedding limit of an upper electrode, the resolution limit of photolithography technology and the minimum processing dimension. SOLUTION: The lower electrode having a crown structure is considered as the lower electrode which does not use a rough-surface conducting film, as the lower electrode which uses the rough-surface conducting film only for an inner film, as the lower electrode which uses the rough-surface conducting film only for an outer wall, and as the lower electrode which uses the rough-surface conducting film for both the inner wall and the outer wall. When the defective operation of an information storing capacitor element caused by the insufficient deposition of the conducting film of the upper electrode is caused by the inner short circuit and the occurrence of the leakage of the stored electric charge caused by the insufficient outer space between the lower electrodes is caused by the outer short circuit, the limited value of the inner short circuit and the limited value of the outer short circuit are obtained by computation. The photo-lithography limits of a concave crown and a convex crown are obtained by computation. The limits are corrected by the minimum processing dimension. The optimum height of the lower electrode and the inner space are indicated with thick solid lines. |
