发明名称 SEMICONDUCTOR AND FABRICATION THEREOF
摘要 PROBLEM TO BE SOLVED: To enhance productivity by connecting a induction part for ensuring conductivity between the source part of a transistor and the power supply electrode with the source part with high conductivity and decreasing the connection resistance between the drain part and the output electrode without increasing the number of contacts thereby simplifying the structure as a whole. SOLUTION: Adjacent source part 44 and induction part 45 are connected through a low resistance conductive layer 48 formed on the surface and an output electrode 58 is connected with a low resistance conductive layer 53 formed on the surface at a drain part 51. The conductive part 48 for connecting the source part 44 and the induction part 45, and the conductive layer 53 for ensuring conductivity between the drain part 51 and the output electrode 58 are formed by single process on the surface of a substrate 31 beneath an insulation layer 35.
申请公布号 JPH1126599(A) 申请公布日期 1999.01.29
申请号 JP19970180091 申请日期 1997.07.04
申请人 NEC CORP;NEC IC MICROCOMPUT SYST LTD 发明人 MATSUMOTO TAKESHI;MARUYAMA HIROAKI
分类号 H01L21/8238;H01L21/3205;H01L21/768;H01L21/822;H01L23/52;H01L27/04;H01L27/092;H01L29/10;(IPC1-7):H01L21/823 主分类号 H01L21/8238
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