| 摘要 |
PROBLEM TO BE SOLVED: To perform an electrical connection with a normally used wiring material by implanting arsenic ions into one portion of a polysilicon film with a dosage amount that is equal to or more than specific amount and performing heat treatment and then forming a wiring layer, consisting of aluminum or an aluminum alloy layer on the polysilicon layer and carrying out heat treatment. SOLUTION: A polysilicon film 9 is formed on an oxide film 8, and arsenic ions are implanted into the polysilicon film 9 at least with a dosage amount of 2.0×10<16> /cm<2> . Then, a contact hole is opened on a collector compensation diffusion N<+> region 6, a base region 7, and an oxide film 10 on the polysilicon film 9, an alloy layer between aluminum and silicon is formed on the oxide layer 10, and then an electrical wiring layer 12 is formed. For obtaining the improved electrical junction between a semiconductor substrate and a wiring layer, heat treatment is carried out at 350-500 deg.C and the manufacture of an npn transistor is completed, thus a wiring layer of normal aluminum or aluminum alloy layer can be used.
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