发明名称 |
Capacitance element and method of manufacturing the same |
摘要 |
<p>On a substrate (1), there are provided a lower electrode (2), a capacitance insulating film (3), a passivation insulating film (6), and a first partial film (7a) of an upper electrode (7) to be filled in a second aperture (capacitance determining aperture) formed in the passivation insulating film (6). The lower electrode (2), the capacitance insulating film (3), and the first partial film (7a) constitute a capacitance element. The upper electrode has the first partial film which is in contact with the capacitance insulating film (3) and a second partial film (7b) which is not in contact with the capacitance insulating film (3). A second electrode wire (11) consisting of a lower-layer film composed of titanium (11a) and an upper-layer film composed of an aluminum alloy film (11b) is in contact with the second partial film distinct from the first partial film of the upper electrode. <IMAGE></p> |
申请公布号 |
EP0889532(A1) |
申请公布日期 |
1999.01.07 |
申请号 |
EP19980112285 |
申请日期 |
1998.07.02 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
MIKAWA, TAKUMI;JUDAI, YUJI;NAGANO, YOSHIHISA |
分类号 |
H01L21/02;(IPC1-7):H01L29/92;H01L21/320 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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