| 摘要 |
PROBLEM TO BE SOLVED: To prevent a DRAM equipped with a stacked capacitor structure with hemispherical silicon crystal grains from deteriorating in capacity due to depletion by a method wherein the hemispherical silicon crystal grains are prevented from being defectively formed, and sufficient impurities are introduced into the hemispherical silicon crystal grains. SOLUTION: A first silicon film 9 is formed on a semiconductor substrate 1 where a MOS transistor is built in and formed into a prescribed shape, a natural oxide film 10 is formed on the surface of the first silicon film 9, a second silicon film 11 which contains impurities and a third silicon film 12 which contains no impurity are formed, and in succession, the semiconductor substrate 1 is adjusted to annealing without being exposed to the air, whereby hemispherical silicon crystal grains are formed. Thereafter, electrodes are isolated from each other by etching back to serve as storage electrodes, and then a dielectric film and a plate electrode are formed for the formation of a capacitor. |
