| 摘要 |
<p>PROBLEM TO BE SOLVED: To achieve a miniaturized memory device with a performance equivalent to an SRAM memory device by periodically refreshing DRAM memory array when an external input is in a 1st state, delaying an access to the memory device for a predetermined time while refreshing, and also outputting a waiting signal. SOLUTION: A memory device 10 is comprised of a high speed RAM 14 consisting of a DRAM 12 and SRAM. A refreshment monitoring device 28 refreshes the DRAM 12 when a chip-enable input-CE 24 is not active, and delays a capability of the memory device 10 to execute a page-out access for a predetermined time, and outputs the waiting signal WAIT 30 when a page-in access is attempted during refreshing. Thus, it is possible to configure a high speed memory access device which has a performance equivalent to the SRAM memory device and a more efficient memory capacity per die area.</p> |
