| 摘要 |
PROBLEM TO BE SOLVED: To mass-produce a small sensor, by forming a sensor structure which generates flexure in a flexible part. SOLUTION: A first substrate 100 which is composed of a three-layer structure by a lower layer 110A composed of silicon, by an intermediate layer 120 composed of SiO2 and by an upper layer 130 composed of silicon is prepared. The lower layer 110A is doped with impurities, and it is conductive. The rear surface of the lower layer 110A is etched, a diaphragm 112 and a pedestal 111 are formed, and a second substrate 200 composed of a glass is bonded to its lower part. A capacitance element is formed of an electrode E on the second substrate 200 and of the diaphragm 112. Grooves G11 to G17 are cut by using a dicing blade from the surface side of the upper layer 130, and bottom parts of the grooves are dug by an etching operation until the surface of the lower layer 110A is exposed. When unit regions U1, U2 are separated, a structure in which weight parts 131 are situated in the center of the diaphragm 112 and in which pedestals 132 are formed in the circumference is obtained. Instead of the capacitance element, a piezoresistance element may be used. |
