| 摘要 |
PROBLEM TO BE SOLVED: To fabricate reliable semiconductor devices in a short turn around time while succeeding in forming a contact hole of a minute size. SOLUTION: A contact hole 25 is formed by etching using a side wall made of polycrystalline Si film 24 containing no impurities and an Si3 N4 film 22 as masks. The contact hole 25 and the polycrystalline Si film 24 have their insides embedded by the Si3 N4 22 and the polycrystalline Si film 24 which work as stoppers. After etching polycrystalline Si film 26, the Si3 N4 film 22 is removed. Owing to such a construction an electrode and a plug which are favorably electrically connected with each other can be formed simultaneously. |
