Method for forming high performance thin film transistor structure

摘要

A high performance thin film transistor structure which includes a pixel electrode layer formed after a passivation step such that electrical connections can be made to a source electrode and to overlap a channel length of the transistor. As a result, the effective channel length can be reduced and the occurrence of short-circuiting is also minimized in densely packed devices. The pixel electrode can be formed of a non-transparent metallic material to serve as a light shield such that the thin film transistor can be most suitably used in a liquid crystal display device.