发明名称 |
A capacitor and method for making a capacitor |
摘要 |
<p>The present invention provides a semiconductor device having a capacitor that is formed through: a first step of forming a polysilicon layer having a rough surface after a nonconductive layer is applied to a base substrate; a second step of etching back away the polysilicon layer to expose the nonconductive layer and thus remaining islandlike polysilicon layers; a third step of etching the nonconductive layer, using the remained polysilicon layers as an etching mask; a fourth step of etching the base substrate of the capacitor, using the nonconductive layer as a mask; a fifth step of forming a pattern of the base substrate of the capacitor after the removal of the remained nonconductive layer; a sixth step of forming an upper substrate of the capacitor after the formation of a dielectric film of the capacitor. According to this invention, the surface area of the capacitor electrode is remarkably enhanced such that the integrity of DRAMs is more improved. <IMAGE></p> |
申请公布号 |
EP0867927(A2) |
申请公布日期 |
1998.09.30 |
申请号 |
EP19980201423 |
申请日期 |
1992.11.17 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
KO, JAEHONG;KIM, SUNGTAE;SHIN, HYUNBO;KANG, SEONGHUN |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;H01L29/94;(IPC1-7):H01L21/320 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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