| 摘要 |
PROBLEM TO BE SOLVED: To enable a semiconductor device possessed of a micro channel to be manufactured through a simple method without using a vacuum process and improved in erase time by a method wherein a metal micro crystal which confines electrons in a potential well is formed directly on a part of a tunnel oxide film on a semiconductor substrate, and an insulating film is formed thereon. SOLUTION: A source electrode 1 and a drain electrode 2 are formed, then a tunnel thick oxide film 4 of SiO2 is formed and then subjected to a pre- treatment for electroless plating to form palladium catalyst nucleus. Polyimide precursor liquid which contains palladium salt is applied by spin coating, subjected to pre-baking, then patterned by irradiation with light rays, and thermally treated to turn into imide. By pre-baking, palladium micro crystals are formed on a boundary between the tunnel oxide film 4 and a polyimide precursor coating film and its vicinity. A gate electrode 3 is formed on a polyimide insulating film 6, and thus a MOSFET coupled-type memory is obtained. This semiconductor device is markedly improved in erase time. |
