| 摘要 |
Producing a conductive plug comprises: (1) on one semiconductor substrate forming one device with conductive region;(2) on the semiconductor substrate forming one insulator; (3) etching the insulator to form one contact hole, which expose the device conductive region; (4) on the contact hole surface forming one diffusion barrier layer; (5) in one reaction chamber, applying one hydrogen plasma to process the diffusion barrier layer; (6) in the contact hole filling one conductor to form one conductive plug. |
