发明名称 MANUFACTURE OF FLOW RATE DETECTING ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To improve responsiveness without thinning the thickness of a support film and a protection film and improve detecting sensitivity and strength by overlapping at least one part of the pattern of temperature resistance with the pattern of heat generation resistance so as to form a flow detecting element. SOLUTION: An insulating support film 2 made of silicon nitride is formed on a flat plate shaped substrate 1 made of silicon, and thereon heat generation resistance 4 and comparison resistance 7 made of platinum or the like are formed. An insulating intermediate film 11 made of silicon nitride is formed so as to cover the heat generation resistance 4 and the comparison resistance 7, and temperature resistance 5, 6 are formed so as to pile on the heat generation resistance 4 through the intermediate film 11. At least one part of the pattern of the temperature resistance 5, 6 is formed so as to overlap with the pattern of the heat generation resistance 4. Further, an insulating protection film 3 made of silicon nitride is formed so as to cover the temperature resistance 5, 6. Hereby, thermal combination in the state holding insulation is improved, and response delay of the temperature resistance 5, 6 be reduced.</p>
申请公布号 JPH10260069(A) 申请公布日期 1998.09.29
申请号 JP19970063009 申请日期 1997.03.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 TSUTSUMI KAZUHIKO;MATSUURA TSUKASA;TAGUCHI MOTOHISA
分类号 G01P5/12;F02D35/00;G01F1/68;G01F1/692;G01P5/10;(IPC1-7):G01F1/68 主分类号 G01P5/12
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