Thin film transistor for antistatic circuit and method for fabricating the same

摘要

A thin film transistor for an antistatic circuit includes: wells formed on a silicon substrate; insulating layers for electrical isolation between electrodes formed within the wells; low density impurity diffused regions respectively interposed between the insulating layers; a first high-density impurity diffused region formed within one low-density impurity diffused region; a second high-density impurity diffused region formed within the other low-density impurity diffused region; interlevel insulating layers formed on the insulating layers and the low-density impurity diffused layers; and metal gate electrodes formed on the low-density impurity diffused layers and the interlevel insulating layers; at least one of the first high-density impurity diffused region and the second high-density impurity diffused region being arranged to overlap an active region, inward from outside edges of the active region.