| 摘要 |
PROBLEM TO BE SOLVED: To enable a high-permittivity Ta2 O5 film which restrains a leakage current to be formed on a metal electrode, by a method wherein the Ta2 O5 film is subjected to low-temperature annealing so as to sufficiently eliminate the cause of the leakage current and then crystallized. SOLUTION: The capacitor of a semiconductor device possessed of a high- permittivity capacitor dielectric film is formed through such a manner that a high-dielectric Ta2 O5 film is formed on a metal electrode 14 and then crystallized. In this case, a high-dielectric Ta2 O5 film 15 is thermally treated at a temperature lower than the crystallization point of Ta2 O5 to make up for oxygen deficiency in it and to remove impurities. Then, the Ta2 O5 film 15 is thermally treated at high temperatures for crystallization, whereby the Ta2 O5 film 15 crystallized on the metal electrode 14 is lessened in leakage current. |
