| 摘要 |
In a semiconductor memory device including a plurality of memory cell blocks and a plurality of redundant memory cell arrays each corrsponding to one of the memory cell blocks, a first selecting circuit selects memory cells from the memory cell blocks. Also, a redundant selection signal generating circuit generates redundant selection signals for the redundant memory cell arrays, and a redundant selection signal encoder encodes the redundant selection signals into redundant encode signals. A second selecting circuit decodes the redundant encode signals to select redundant memory cells from the redundant memory cell arrays. Further, when one of the redundant selection signals is generated, a deactivating circuit deactivates the first selecting circuit.
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