| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a fuse, which can be manufactured through a short manufacturing process and can be trimmed with a low-energy laser beam. SOLUTION: A pair of conductive films 3 (3A and 3B) formed are flush with a lower insulating film 2 in a state where the films 3A and 3B face opposite to each other, and the spacing L between the films 3A and 3B is made shorter than a thickness t4 of an upper insulating film 4. Therefore, the conductive films 3A and 3B can be trimmed effectively with a laser beam LB, because the beam LB can reach the films 3A and 3B through the upper insulating film 4 and can cause short-circuiting between the films 3A and 3B by fusion, even when the beam LB has small energy.</p> |
