发明名称 |
MOS transistor adopting titanium-carbon-nitride gate electrode and manufacturing method thereof |
摘要 |
A MOS transistor employing a titanium-carbon-nitride (TiCN) gate electrode is provided. The MOS transistor has a gate insulating film, a gate electrode, and a source/drain region on a semiconductor substrate. The gate electrode is formed of a single TiCN film or a double film having a TiCN film and a low-resistant metal film formed thereon. The TiCN gate electrode exhibits a low resistance of about 80-100 mu OMEGA -cm and can control variations in Fermi energy level.
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申请公布号 |
US5795817(A) |
申请公布日期 |
1998.08.18 |
申请号 |
US19960619361 |
申请日期 |
1996.03.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JOO, SUK-HO;PAIK, CHOONG-RYUL;LEE, KI-HONG |
分类号 |
H01L21/28;H01L29/49;H01L29/78;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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