发明名称 |
Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD |
摘要 |
A method for protecting a susceptor when SiC, a Group III-nitride or alloys thereof, is epitaxially grown by chemical vapor deposition on a substrate arranged on a surface of the susceptor includes the steps of heating the susceptor and thus the substrate and a gas mixture fed to the substrate for the growth, placing a plate made of SiC, an alloy of SiC and the material grown, or the material grown, on the susceptor and arranging the substrate on the plate.
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申请公布号 |
US5792257(A) |
申请公布日期 |
1998.08.11 |
申请号 |
US19950421879 |
申请日期 |
1995.04.14 |
申请人 |
ABB RESEARCH LTD. |
发明人 |
KORDINA, OLLE;HALLIN, CHRISTER;JANZEN, ERIK |
分类号 |
C30B25/12;C30B25/02;C30B25/10;C30B29/36;H01L21/205;(IPC1-7):C30B25/12 |
主分类号 |
C30B25/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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