| 摘要 |
A method is provided for forming an improved landing pad with barrier of a semiconductor integrated circuit, and an integrated circuit formed according to the same. An opening is formed through a first dielectric layer to expose a portion of a diffused region. A landing pad is formed over the first dielectric layer and in the opening. The landing pad preferably comprises a silicide layer disposed over a barrier layer which is disposed over a polysilicon layer. The landing pad will provide for smaller geometries and meet stringent design rules such as that for contact space to gate. The barrier layer, formed as part of the landing pad, will provide for a uniform and high integrity barrier layer between the diffused region and an overlying aluminum contact to prevent junction spiking. A second dielectric having an opening therethrough is formed over the landing pad. A conductive contact, such as aluminum, is formed in the contact opening. The conductive contact will connect with the diffused region through the landing pad. Misalignment of the conductive contact opening may be tolerated without invading design rules. |
