摘要 |
PROBLEM TO BE SOLVED: To suppress a rate of change of voltage (dv/dt) of the semiconductor switch circuit that is used for a switching means of a power converter. SOLUTION: An IGBT 30 as a self-extinction of arc device is used for a main switch element, a MOSFET 31 as an auxiliary switch element is connected in parallel with the IGBT 30, a built-in diode of the MOSFET 31 is used for a flywheel diode, a resistor 31 is connected between a gate terminal and a source terminal of the MOSFET 31, and the dv/dt to be produced is reduced by utilizing the operation of the MOSFET 31 when the IGBT 30 is turned off or when the current flowing to the built-in diode is recovered reversely. |