发明名称 SEMICONDUCTOR SWITCH CIRCUIT
摘要 PROBLEM TO BE SOLVED: To suppress a rate of change of voltage (dv/dt) of the semiconductor switch circuit that is used for a switching means of a power converter. SOLUTION: An IGBT 30 as a self-extinction of arc device is used for a main switch element, a MOSFET 31 as an auxiliary switch element is connected in parallel with the IGBT 30, a built-in diode of the MOSFET 31 is used for a flywheel diode, a resistor 31 is connected between a gate terminal and a source terminal of the MOSFET 31, and the dv/dt to be produced is reduced by utilizing the operation of the MOSFET 31 when the IGBT 30 is turned off or when the current flowing to the built-in diode is recovered reversely.
申请公布号 JPH10209832(A) 申请公布日期 1998.08.07
申请号 JP19970012389 申请日期 1997.01.27
申请人 FUJI ELECTRIC CO LTD 发明人 NISHIKAWA YUKIHIRO;IGARASHI MASATERU
分类号 H03K17/16;H03K17/56 主分类号 H03K17/16
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