| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for producing a photomask capable of forming layers having high overlay accuracy. SOLUTION: This process for producing the photomask consists in measuring the misalignment quantity of resist patterns by respectively comparing the first and second resist patterns (S300), calculating the misalignment quantity of mask patterns in accordance with this misalignment quantity of the resist patterns (S400), calculating a drawing field deviation quantity from the misalignment quantity of the mask patterns (S500) and drawing the prescribed mask patterns on a mask substrate according to the drawing field deviation quantity. |
