发明名称 SEMICONDUCTOR NONVOLATILE STORAGE DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To lessen the circuit area of a decoder of a word line drive system circuit and to make high the charging-discharging speed of a word line at the time of erase/write/verification, by controlling a transfer gate to be in a state of continuity in a read operation mode and to be in a state of non-continuity in an erase or write operation mode. SOLUTION: A read system decoder circuit 30 supplies a transfer gate 60 with a word line drive voltage at a read time. An erase/write system decoder circuit 40a outputs a positive or negative high voltage PV, MV in an erase/write/verification mode and supplies a word line WL with a drive voltage of the same value as the word line drive voltage for read at the read time. The transfer gate 60 is controlled to be in a state of continuity in a read mode and to be in a state of non-continuity in the erase/write/verification mode by a transfer gate control circuit 50a.</p>
申请公布号 JPH10199274(A) 申请公布日期 1998.07.31
申请号 JP19960351136 申请日期 1996.12.27
申请人 SONY CORP 发明人 NOBUKATA HIROMI
分类号 G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C16/06
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