PROCEDE DE TRAITEMENT D'UNE SURFACE D'UN SEMI-CONDUCTEUR, DISPOSITIF CORRESPONDANT ET SEMI-CONDUCTEUR ASSOCIE

摘要

The invention concerns a method for treating a surface (2) of a semiconductor (1B) and a corresponding treating device. The surface is taken up by first molecules of the semiconductor having external bonds saturated with hydrogen. The method consists in sending a beam (30) of ions highly charged and with low energy towards the surface, and applying thereto a deceleration voltage (U2) in the proximity of the surface. In this way, the ions extract without making contact the electrons of the first molecules, releasing the hydrogen atoms saturating the corresponding external bonds. Then a product saturating the pendant external bonds is sent so as to form second molecules of an insulating compound. The invention is useful for surface cleaning, etching and nano-manufacturing.