发明名称 |
Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD |
摘要 |
Methods for defect-free impurity-induced laser disordering (IILD) of AlGaInP and AlGaAs heterostructures. Phosphorus-doped or As-doped films are used in which silicon serves as a diffusion source and silicon nitride acts as a barrier for selective IILD. High-performance, index-guided (AlGa)0.5In0.5P lasers may be fabricated with this technique, analogous to those made in the AlGaAs material system. The deposition of the diffusion source films preferably is carried out in a low pressure reactor. Also disclosed is a scheme for reducing or eliminating phosphorus overpressure during silicon diffusion into III-V semiconducting material by adding a pre-diffusion anneal step. Defects produced during intermixing are also reduced using a GaInP or GaInP/GaAs cap.
|
申请公布号 |
US5766981(A) |
申请公布日期 |
1998.06.16 |
申请号 |
US19950368676 |
申请日期 |
1995.01.04 |
申请人 |
XEROX CORPORATION |
发明人 |
THORNTON, ROBERT L.;BRINGANS, ROSS D.;CONNELL, G. A. NEVILLE;TREAT, DAVID W.;BOUR, DAVID P.;PONCE, FERNANDO A.;JOHNSON, NOBLE M.;BEERNINK, KEVIN J. |
分类号 |
H01L21/20;H01L21/324;H01S5/00;H01S5/227;H01S5/34;H01S5/343;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|