GATE ELECTRODE FOR GaAs FET

摘要

A semiconductor device which includes a body (2) of one of gallium-based or arsenic-based group III-V semiconductor material and a transistor therein having a source/drain region (1) and a gate (5, 15, 35). The gate comprises a gate electrode over the source/drain region which is free of palladium, iridium, rhodium and platinum. The gate electrode (5) comprises, according to a first embodiment, a layer of titanium (7) followed by a layer of refractory metal (9) taken from the class consisting of tungsten, molybdenum, rhenium and tantalum which is followed by a layer of gold (11).