Methode zur Bildung eines Photomaskenmusters

摘要

In a method for forming a self aligned phase shift pattern a silicon film is formed on the surface of SiO2 a substrate for photomask, and a silicon nitride film is formed thereon. Then, patterning the silicon film and the silicon nitride film into desired shapes with the photolithography method, the edge portion of the patterned silicon film is oxidized to provide a translucent region consisting of a silicon oxide film only on the edge portion, and the silicon nitride film is removed.