| 摘要 |
A silicon on insulator (SOI) memory comprises: (a) a substrate (10) having a silicon surface layer covering a buried silicon oxide layer (12); (b) field isolation regions (14) on the substrate surface, extending through the silicon layer and in contact with the buries silicon oxide layer, to define active device regions on the silicon surface layer; (c) first and second source/drain regions (24), formed in the active device regions to define channel regions in the silicon surface layer; (d) a gate oxide layer on the channel region, with a gate electrode (18) on top; (e) a trench formed through the first source/drain region and the silicon surface layer, and into the buried silicon oxide layer; and (f) a lower capacitor electrode (32) extending into the trench, with a dielectric layer (34) and an upper capacitor electrode (36) formed on top. Also claimed is a method of making the above SOI memory. |
