| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a detecting method in which the position of a foreign matter stuck to a sample in detected and in which the center of the foreign matter is positioned to the irradiation position with an electron beam. SOLUTION: From a scanning electron gun 41, an electron beam is projected and scanned over a semiconductor wafer 21 which is placed on an X-Y stage 11. Then, by using a first X-ray detector 42a and a second X-ray detector 42b, characteristic X-rays which are generated from a very small foreign matter stuck to the semiconductor wafer 21 are detected. Then, two output signals which are output from the respective X-ray detectors 42a, 42b are evaluated relatively, the position of the very small foreign matter 31 is detected, and its center is positioned.</p> |
