发明名称 Endpoint detecting apparatus in a plasma etching system
摘要 An apparatus used for detecting the endpoint or described completion point of an etching process has a detection window, an optical cable, and a bracket for fixedly holding the detection window and the optical cable with respect to each other. The detection window protrudes outwardly from a wall of a reaction chamber. The optical cable transmits light generated during an etching process from the detection window to a detecting device separate from the detection chamber. The bracket is attached to the wall of the reaction chamber so as to configure a space between the bracket and the detection window. The configuration reduces the intensity of the electric field formed between the bracket and plasma in the reaction chamber.
申请公布号 US5748297(A) 申请公布日期 1998.05.05
申请号 US19960761788 申请日期 1996.12.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SUK, JONG-WOOK;PARK, JIN-HO;PARK, SHIN-HYUN;KIM, CHANG-SIK
分类号 H05H1/46;C23F4/00;G01N21/68;H01L21/302;H01L21/3065;H01L21/66;(IPC1-7):G01N21/62 主分类号 H05H1/46
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