METHOD FOR MAKING A SEMICONDUCTOR DEVICE

摘要

A fabrication method of metal wires is provided to enhance an aspect ratio between cell and peripheral circuits. The method for forming metal wires comprises the steps of: forming a cell region and a peripheral region on a silicon substrate(1); forming a photoresist layer(4) only on the cell region and etching a plate electrode(3); depositing a selective oxide(5) to form only on the peripheral region; removing the photoresist layer(4); and forming a flattening oxide layer(6). Thereby, it is possible to easily form flattened metal wires by decreasing an aspect ratio between the cell region and the peripheral region.