ELECTRON SHOWER SYSTEM OF/ON IMPLANTER USING LOW-ENERGY HIGH-VELOCITY-ATOMIC-BEAM

摘要

With Ar gas provided through a gas inlet nozzle of a discharge chamber(10), upon power supply being applied to an outside resonance generator(11), a resonance frequency generated from the resonance generator(11) is excited to the discharge chamber(10) through an inductor(12). Accordingly, a plasma is formed inside of the discharge chamber(10), the low energy high-speed atomic beam being generated by operation of resonance charging change arising from passing of the plasma through the parent gas(Ar). The generated low energy high-speed atomic beam is extracted by a electron extracting means installed at a lower part of the discharge chamber(10) to a high vacuum chamber there to be contacted to a wafer(W) placed in the high vaccum chamber.