Verfahren zur Herstellung eines MOS-Transistors,申请号DE19961039875-传众专利搜索

发明名称	Verfahren zur Herstellung eines MOS-Transistors
摘要	The invention concerns a method of producing a MOS transistor with a heavily doped drain (HDD) profile and a lightly-doped drain (LDD) profile. According to this method, in order to produce steep doping substance profiles in the region of the LDD profile, the HDD profile is formed first and then the LDD profile is formed. The LDD profile is preferably produced by etching and selective epitaxy which is doped in situ.
申请公布号	DE19639875(C1)	申请公布日期	1998.04.02
申请号	DE19961039875	申请日期	1996.09.27
申请人	SIEMENS AG, 80333 MUENCHEN, DE	发明人	LUSTIG, BERNHARD, DR., 81737 MUENCHEN, DE;SCHAEFER, HERBERT, DR., 85635 HOEHENKIRCHEN-SIEGERTSBRUNN, DE;FRANOSCH, MARTIN, 81739 MUENCHEN, DE
分类号	H01L21/336;H01L21/8238;H01L27/092;H01L29/78;H01L29/786;(IPC1-7):H01L21/336	主分类号	H01L21/336
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