METHOD OF OPERATING DRAM DEVICE INCLUDING FIN TRANSISTOR AND DRAM DEVICE

摘要

A method of operating a DRAM device including a FIN transistor and a DRAM device thereof are provided to increase integration density of the DRAM device without comprising a generator to apply a body bias to a peri/core region of the DRAM device and thus to reduce operation failure. A semiconductor substrate(100) comprises a FIN active region formed with a FIN transistor, an isolation region and an active region connected to a body part of the FIN transistor as having a flat plane. A gate structure is formed on the center of the FIN active region. A dummy gate structure is formed at the edge of the FIN active region. A source/drain(108) are formed below the surface of the FIN active region on both sides of the gate structure. A first interlayer insulation film(110) covers the gate structure and the dummy gate structure. A bit line structure is electrically connected to the drain. A second interlayer insulation film(114) covers the bit line structure. A capacitor structure(130) is electrically connected to the source. A third interlayer insulation film(120) covers the capacitor. A line structure is connected to the active region surface and the dummy gate structure at the same time, and is connected to a port applied with a ground level from the outside to ground the body of the FIN transistor.