Multiport register file memory using small voltage swing for write operation

摘要

A multiport register file memory includes a cross-coupled sense amplifier as a storage element. A buffered switching circuit provides a voltage potential to the storage element in response to a write enable signal for switching-on/off the storage element. Each storage element provides two storage nodes which are coupled to corresponding switched bit lines. Coupling between each storage node and corresponding switched bit lines is provided by a pass transistor that is controlled by a word line attached to a gate of the pass transistor. The write operation begins by powering-off at least one controlled supply voltage rail that provides a voltage potential to the storage element. A small voltage swing of between two hundred and five hundred millivolts (200-500 mV) is supplied from the bit lines to the storage nodes of the sense amplifier through the pass transistors. The cross-coupled sense amplifier is then switched on by connecting the sense amplifier to the supply voltage node previously switched-off by the buffered switching circuit. Switching on the sense amplifier results in the amplification of the small voltage swing and storage of the resulting signal. The storage nodes are then accessed by using word lines to activate corresponding pass transistors capable of passing small or large voltage swing signals held by the storage element.