| 摘要 |
PROBLEM TO BE SOLVED: To obtain a composite semiconductor and a composite semiconductor thin film utilizable as a material for optical function element in visible and near infrared region and to provide a process for the production of the composite semiconductor thin film. SOLUTION: This composite semiconductor is composed of indium (In), zinc (Zn) and nitrogen and has an Eg of 1.23-1.95eV. This composite semiconductor thin film is composed of a composite semiconductor composed of In, Zn and nitrogen and having an Eg of 1.23-1.95eV. This process for the production of the composite semiconductor thin film comprises the use of a plasma containing at least nitrogen, the evaporation of In and Zn from an evaporation source containing at least In and Zn or the evaporation of In and Zn respectively from an evaporation source containing at least In and an evaporation source containing at least Zn and the deposition of the evaporated In and Zn together with nitrogen in the plasma on a matrix to form the objective composite semiconductor thin film. |
