| 摘要 |
PROBLEM TO BE SOLVED: To enable connection to each point of an impurity diffusion layer through a uniform resistance by providing a contact opening part between an impurity diffusion layer and a wiring layer of a relatively high resistance. SOLUTION: A metallic wiring 1 is connected to a tungsten silicide wiring layer by a first contact 104. The tungsten silicide wiring layer is connected to a drain diffusion layer by a second contact 105. The first contact 104 and the second contact 105 are formed alternately and a metallic wiring is connected to a drain diffusion layer 107 through a resistance of a tungsten silicide wiring layer. An excess current is applied to an input/output terminal, and even if an MOSFET switches on by bi-polar operation, it is a tungsten silicide layer of high melting point that is directly connected to the drain diffusion layer 107 and a contact is not fused. Furthermore, since a resistance of a tungsten silicide layer enters the drain diffusion layer 107 from a metallic wiring in series, discharge current flowing during excess voltage application is limited and electrostatic breakdown strength is improved. |
