| 摘要 |
PROBLEM TO BE SOLVED: To stabilize a device for a long time by reducing the specific contact resistruaty and enhance the thermal stability. SOLUTION: An electrode layer 3 is formed on a p-type compd. semiconductor layer 1 made of a p-type GaN, etc., through a contact layer 2 formed by the MBE method so that the hole concn. is higher than that of the semiconductor layer 1. The electrode layer 3 is formed by laminating an Au- or other transition metallic (except Pt) layer 3a, Pt 3b and metal layer 3c and then annealing them. The Pt layer blocks Au from diffusing into the compd. semiconductor layer, and the transition metal layer adheres the Pt layer to the compd. semiconductor layer. |
