SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device which reduces useless power consumption by optimizing sense-enable time. SOLUTION: The output node N1 of a sense amplifier SA is connected to the input of a tristate buffer (delay means) TB and the output node N2 of the tristate buffer TB is connected to the input of an inverter 11 which constitutes a data holding means L1. And the output nodes N2, N3 are connected to the input of an EXNOR circuit G1 and the output node N4 of the EXNOR circuit G1 is connected to a reset circuit RS.