发明名称 |
Semiconductor processing method of forming field isolation oxide relative to a semiconductor substrate |
摘要 |
A semiconductor processing method of forming field isolation oxide relative to a semiconductor substrate includes providing a semiconductor substrate having field and active area regions; forming masking material over the active area region and leaving the field region exposed, the masking material comprising first, second and third layers, and having a sidewall; exposing the semiconductor substrate to first oxidation conditions effective to form field isolation oxide of a first thickness over the exposed field region; forming an etch stop material layer over the sidewall; removing at least a portion of the third layer selectively relative to the etch stop material layer; and subjecting the semiconductor substrate to second oxidation conditions effective to grow the field isolation oxide to a second thickness on the exposed field region of the semiconductor substrate.
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申请公布号 |
US5714414(A) |
申请公布日期 |
1998.02.03 |
申请号 |
US19960699551 |
申请日期 |
1996.08.19 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LEE, ROGER R.;GONZALEZ, FERNANDO |
分类号 |
H01L21/32;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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