| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain an active matrix panel which is of optically fine and is of compact and is excellent in reliability by making gate lengths of first silicone thin film transistors shorter than gate lengths of second silicone thin film transistors. SOLUTION: Plural gate lines 24, 25 and plural source lines 26, 27, 28 and a pixel matrix having first conduction type first silicone thin film transistor 29 connected to the plural gate line 25, 26 and the plural source lines 26, 27, 28 and a source line driver circuit 12 supplying signals to the plural source lines 26, 27, 28 are arranged on a substrate. The source line driver circuit 12 has a shift register 13 and sample-hold circuits 17, 18, 19 to which control signals from the shift register 13 are supplied. The sample-hold circuits 17, 18, 19 have first conduction type second silicone thin film transistors. Then, the gate lengths of the first silicone thin film transistors 29 are made shorter than the gate lengths of the second silicone thin film transistors.</p> |
