| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the degradation in display quality by forming apertures at insulating films between pixel electrodes and signal lines. SOLUTION: The semiconductor thin films formed on the gate insulating films 33 and the regions exclusive of the device regions of n<+> type silicon layers formed thereon are respectively removed, by which channel regions 34a are formed. Drain regions 38a and source regions 38b are formed on both sides of the front surfaces thereof. Pixel electrodes 40 are formed at the prescribed points on the gate insulating films 33 and drain lines 43 are formed at another prescribed points on the gate insulating films 33. In such a case, long holes 41 are formed on the gate insulating films 33 between the pixel electrodes 40 and the drain lines 43 and, therefore, the removal of the remaining semiconductor thin films and the n<+> type silicon layers together with the gate insulating films 33 at the time of forming the long holes 41 is made possible. Then, the shorting between the drain lines 43 and the pixel electrodes 40 by the unnecessary parts of the semiconductor thin films and the n<+> type silicon layers is averted and the degradation in the display quality is averted.</p> |
