| 摘要 |
PROBLEM TO BE SOLVED: To enhance the characteristics of oscillation threshold current and the slope efficiency by setting the impurity concentration of a first conductivity type light confinement layer, having refractive index lower than that of a second conductivity type clad layer and an energy band gap larger than that of an oscillation light, at a specified level or below. SOLUTION: The semiconductor laser element comprises an active layer 5 sandwiched by clad layers 3, 7 having band gap of higher energy than the band gap (i.e., energy of oscillation light) of the active layer 5, a light confinement layer 10 having an energy band gap larger than that of the oscillation light (i.e., the oscillation light is hardly absorbed) and a refractive index lower than that of the clad layer 7, and a current block layer 11 excellent in thermal conductivity as compared with the light confinement layer 10. Impurity concentration of the light confinement layer 10 is set at 5×10<17> cm<-3> or less. This arrangement enhances the characteristics of oscillation threshold current and the slope efficiency.
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